2N6059+JAN NPN Darlington Transistor
From Defense Supply Center Columbus
| @I(B) (A) (Test Condition) | 120m |
| @I(C) (A) (Test Condition) | 12 |
| @V(CBO) (V) (Test Condition) | 50 |
| @V(CE) (V) (Test Condition) | 3.0 |
| Absolute Max. Power Diss. (W) | 150 |
| I(C) Abs.(A) Collector Current | 12 |
| I(CBO) Max. (A) | 1.0m |
| Mil Number | JAN2N6059 |
| Military | Y |
| Package | TO-3 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 100 |
| V(BR)CEO (V) | 100 |
| V(CE)sat Max.(V) | 3.0 |
| f(T) Min. (Hz) Transition Freq | 4.0M |
| h(FE) Max. Current gain. | 18k |
| h(FE) Min. Static Current Gain | 750 |
