HGT1S12N60A4DS9A
54 A, 600 V, N-CHANNEL IGBT, TO-263AB

From Fairchild Semiconductor Corporation

StatusDISCONTINUED
Case ConnectionCOLLECTOR
Channel TypeN-CHANNEL
Collector Current-Max (IC)54 A
Collector-emitter Voltage-Max600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Number of Elements1
Number of Terminals2
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Transistor TypeINSULATED GATE BIPOLAR
Turn-off Time-Nom (toff)180 ns
Turn-on Time-Nom (ton)33 ns

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