HGT1S12N60A4DS9A 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
From Fairchild Semiconductor Corporation
Status | DISCONTINUED |
Case Connection | COLLECTOR |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 54 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Elements | 1 |
Number of Terminals | 2 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 180 ns |
Turn-on Time-Nom (ton) | 33 ns |