FSC11LF
N-Channel UHF-Microwave MESFET

From Fujitsu

@Freq. (Hz) (Test Condition)4G
@I(D) (A) (Test Condition)10m
@Temp (°C) (Test Condition)25
@V(DD) (V) (Test Condition)3
@V(DS) (V) (Test Condition)3
I(D) Abs. Drain Current (A)90m
I(DSS) Max. (A)90m
I(DSS) Min. (A)30m
Noise Figure Max. (dB)1.2
P(D) Max.(W) Power Dissipation250m
PackageMicro-X
Power Gain Min. (dB)11
Semiconductor MaterialGaAs
V(BR)DSS (V)8
V(BR)GSS (V)-5
V(GS)off Max. (V)-3.5
g(fs) Max, (S) Trans. conduct,40m
g(fs) Min. (S) Trans. conduct.30m

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