FSC11LF N-Channel UHF-Microwave MESFET
From Fujitsu
@Freq. (Hz) (Test Condition) | 4G |
@I(D) (A) (Test Condition) | 10m |
@Temp (°C) (Test Condition) | 25 |
@V(DD) (V) (Test Condition) | 3 |
@V(DS) (V) (Test Condition) | 3 |
I(D) Abs. Drain Current (A) | 90m |
I(DSS) Max. (A) | 90m |
I(DSS) Min. (A) | 30m |
Noise Figure Max. (dB) | 1.2 |
P(D) Max.(W) Power Dissipation | 250m |
Package | Micro-X |
Power Gain Min. (dB) | 11 |
Semiconductor Material | GaAs |
V(BR)DSS (V) | 8 |
V(BR)GSS (V) | -5 |
V(GS)off Max. (V) | -3.5 |
g(fs) Max, (S) Trans. conduct, | 40m |
g(fs) Min. (S) Trans. conduct. | 30m |