Product Datasheet Search Results:

IRFF120_NL.pdf6 Pages, 195 KB, Original
IRFF120_NL
Fairchild Semiconductor
Trans MOSFET N-CH 100V 6A 3-Pin TO-205AF
IRFF120.pdf19 Pages, 625 KB, Original
IRFF120
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRFF120.pdf5 Pages, 163 KB, Scan
IRFF120
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.
IRFF120.pdf2 Pages, 122 KB, Scan
IRFF120
General Electric
Power Transistor Data Book 1985
IRFF120.pdf5 Pages, 172 KB, Scan
IRFF120
Harris Semiconductor
Power MOSFET Data Book 1990
IRFF120R.pdf5 Pages, 182 KB, Scan
IRFF120R
Harris Semiconductor
Power MOSFET Data Book 1990
IRFF120.pdf7 Pages, 1325 KB, Original
IRFF120
Infineon Technologies Ag
Trans MOSFET N-CH 100V 6A 3-Pin TO-39
IRFF120.pdf7 Pages, 324 KB, Original
IRFF120
Intersil Corporation
6.0A, 100V, 0.300 ?, N-Channel Power MOSFET
IRFF120.pdf7 Pages, 200 KB, Original
IRFF120
International Rectifier
6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF120PBF.pdf7 Pages, 200 KB, Original
IRFF120PBF
International Rectifier
6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF120R.pdf1 Pages, 41 KB, Original
IRFF120R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRFF120.pdf3 Pages, 179 KB, Scan
IRFF120
N/a
FET Data Book

Product Details Search Results:

Fairchildsemi.com/IRFF120_NL
897 Bytes - 22:21:17, 30 December 2024
Infineon.com/IRFF120
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"6(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1437 Bytes - 22:21:17, 30 December 2024
Irf.com/IRFF120
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1461 Bytes - 22:21:17, 30 December 2024
Irf.com/IRFF120PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1528 Bytes - 22:21:17, 30 December 2024
Semelab.co.uk/IRFF120
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Connec...
1403 Bytes - 22:21:17, 30 December 2024
Semelab.co.uk/IRFF120-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Connec...
1441 Bytes - 22:21:17, 30 December 2024
Semelab.co.uk/IRFF120-JQR-BE1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","...
1501 Bytes - 22:21:17, 30 December 2024
Semelab.co.uk/IRFF120R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","...
1466 Bytes - 22:21:17, 30 December 2024
Various/IRFF120R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"20","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"2.9","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"24","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF",...
1265 Bytes - 22:21:17, 30 December 2024

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