BSM300GA120DN2
430 A, 1200 V, N-CHANNEL IGBT

From Infineon Technologies AG

StatusACTIVE
Case ConnectionISOLATED
Channel TypeN-CHANNEL
Collector Current-Max (IC)430 A
Collector-emitter Voltage-Max1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Mfr Package DescriptionSINGLE SWITCH 1, 4 PIN
Number of Elements1
Number of Terminals4
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationGENERAL PURPOSE SWITCHING
Transistor Element MaterialSILICON
Transistor TypeINSULATED GATE BIPOLAR
Turn-off Time-Nom (toff)680 ns
Turn-on Time-Nom (ton)210 ns

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