SPD30N03S2L-10G
30 A, 30 V, 14.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

From Infineon Technologies AG

StatusACTIVE
Avalanche Energy Rating (Eas)150 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)30 A
Drain-source On Resistance-Max14.6 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionGREEN, PLASTIC, TO-252, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)120 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links