IXGP30N60C3C1
IGBT Single Transistor, Sic, 60 A, 2.6 V, 220 W, 600 V, TO-220AB, 3

From IXYS SEMICONDUCTOR

Collector Emitter Voltage V(br)ceo:600 V
Collector Emitter Voltage Vces:2.6 V
DC Collector Current:60 A
MSL:-
No. of Pins:3
Operating Temperature Max:150 °C
Operating Temperature Min:-55 °C
Power Dissipation Pd:220 W
SVHC:To Be Advised
Transistor Case Style:TO-220AB
Transistor Type:IGBT

External links