MJD112-001G 2 A, 100 V, NPN, Si, POWER TRANSISTOR
From ON Semiconductor L.L.C.
| Status | ACTIVE |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 2 A |
| Collector-emitter Voltage-Max | 100 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| DC Current Gain-Min (hFE) | 200 |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Mfr Package Description | LEAD FREE, CASE 369D-01, DPAK-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | GENERAL PURPOSE POWER |
| Transition Frequency-Nom (fT) | 25 MHz |
