BCX19T/R Si NPN LP HF BJT
From Philips Semiconductors / NXP Semiconductors
@I(B) (A) (Test Condition) | 50m |
@I(C) (A) (Test Condition) | 500m |
@V(CBO) (V) (Test Condition) | 20 |
@V(CE) (V) (Test Condition) | 1.0 |
Absolute Max. Power Diss. (W) | 300m |
I(C) Abs.(A) Collector Current | 500m |
I(CBO) Max. (A) | 100n |
Military | N |
Package | SOT-23 |
V(BR)CBO (V) | 50 |
V(BR)CEO (V) | 45 |
V(CE)sat Max.(V) | .62 |
h(FE) Max. Current gain. | 600 |
h(FE) Min. Static Current Gain | 100 |