IRF9630PBF MOSFET, Power; P-Ch; VDSS -200V; RDS(ON) 0.8Ohm; ID -6.5A; TO-220AB; PD 74W; VGS +/-20V
From Vishay PCS
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Dimensions | 10.51 x 4.65 x 15.49 mm |
| Forward Diode Voltage | -6.5 V |
| Forward Transconductance | 2.8 S |
| Height | 15.49 mm |
| Length | 10.51 mm |
| Maximum Continuous Drain Current | -4 A |
| Maximum Drain Source Resistance | 0.8 Ω |
| Maximum Drain Source Voltage | -200 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 74 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | Maximum of 29 nC @ -10 V |
| Typical Input Capacitance @ Vds | 700 pF @ -25 V |
| Typical Turn On Delay Time | 12 ns |
| Typical TurnOff Delay Time | 28 ns |
| Width | 4.65 mm |
