IXTN210P10T 210 A, 100 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET
From Zilog
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 3000 mJ |
Case Connection | ISOLATED |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 210 A |
Drain-source On Resistance-Max | 0.0075 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | MINIBLOC-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 800 A |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |