Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Automotive","Continuous Drain Current":"206(A)","Mounting":"Through Hole","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Rad Hardened":"No","Package Type":"TO-273AA","Operating Temp Range":"-40C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-274AC Pkg","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"7360pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"SUPER-220\u2122 (TO-273AA)","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRFBA1404P","Rds On (Max) @ Id, Vgs":"3.7 mOhm @ 95A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"212 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0035 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"650 A","Channel Type":"N...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"Super-220\u2122-3 (Straight Leads)","Current - Continuous Drain (Id) @ 25\u00b0C":"206A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-274AC Pkg","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.7 mOhm @ 95A, 10V","Datasheets":"IRFBA1404PPbF","FET Type":"MOSFET N-Cha...