Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"13.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.28(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"6","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-563","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"7.5(ohm)","Number of Elements":"2"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"13.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.28(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"6","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-563","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"13.5(ohm)","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"SOT-563, SOT-666","Current - Continuous Drain (Id) @ 25\u00b0C":"280mA","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-563","PCN Design/Specification":"Bond Wire 11/Nov/2011","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002V(A)C Datasheet","FET Type":"2 N-Channel (Dual)","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","RoHS Information":"RoHS C...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.28(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"6","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-563","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"13.5(ohm)","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"SOT-563, SOT-666","Current - Continuous Drain (Id) @ 25\u00b0C":"280mA","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-563","PCN Design/Specification":"Mold Compound 20/Aug/2008 IDSS Parameter Update 11/Mar/2015","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002V/VA Datasheet","FET Type":"2 N-Channel (Dual)","Standard Package":"3,000","Drain to Source...