Product Datasheet Search Results:
4 Pages, 131 KB, Original- 2SD2406-Y(F)
- Toshiba
- Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220NIS
4 Pages, 131 KB, Original- 2SD2406-Y(F)
- Toshiba Semiconductor And Storage
- TRANS NPN 80V 4A TO220NIS
Product Details Search Results:
Toshiba.co.jp/2SD2406-Y(F)
{"Collector Current (DC) ":"4(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"80(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Pin Count":"3 +Tab","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Frequency":"8(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"80(V)","DC Current Gain":"120","Category ":"Bipolar Power","Package Type":"TO-220NIS","Configuration":"Single","Operating Temperature Classification":"Military","Number of...
1562 Bytes - 08:06:33, 29 September 2024
Toshiba.semicon-storage.com/2SD2406-Y(F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"4A","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 500mA, 5V","Transistor Type":"NPN","Product Photos":"TO-220AB","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.5V @ 300mA, 3A","Current - Collector Cutoff (Max)":"30\u00b5A (ICBO)","Series":"-","Standard Package":"50","Voltage - Collector Emitter Breakdown (Max)":"80V","Supplier Device Package":"TO-220NIS","Packaging":"Tube","Datasheets":"2SD2406","Power...
1594 Bytes - 08:06:33, 29 September 2024
