Product Datasheet Search Results:
1 Pages, 34 KB, Original- 1N5139A
- Aeroflex / Metelics
- 6.8 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 51 KB, Scan- 1N5139ACO
- Aeroflex / Metelics
- 6.8 pF, 65 V, SILICON, VARIABLE CAPACITANCE DIODE
1 Pages, 61 KB, Scan- 1N5139A
- Api Electronics Group
- VHF-UHF BAND, 6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
2 Pages, 151 KB, Original- 1N5139A
- Codi Semiconductor, Inc.
- Voltage-Variable Capacitance (Tuning) Diodes
1 Pages, 47 KB, Original- 1N5139A
- Crystalonics
- 6.8 pF, 60 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
11 Pages, 330 KB, Scan- 1N5139A+JAN
- Defense Electronics Supply Center
- 60V Vrrm, 6.8pF Capacitance Varactor Diode
11 Pages, 330 KB, Scan- 1N5139A+JANTX
- Defense Electronics Supply Center
- 60V Vrrm, 6.8pF Capacitance Varactor Diode
11 Pages, 330 KB, Scan- 1N5139A+JANTXV
- Defense Electronics Supply Center
- 60V Vrrm, 6.8pF Capacitance Varactor Diode
4 Pages, 824 KB, Original- 1N5139A
- Motorola / Freescale Semiconductor
- Silicon EPICAP Diodes
1 Pages, 9 KB, Original- 1N5139A
- Knox Semiconductor, Inc.
- GENERAL PURPOSE ABRUPT VARACTOR DIODE
Product Details Search Results:
Aeroflex.com/1N5139A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"6.8 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"350","Terminal Position"...
1353 Bytes - 13:53:42, 21 September 2024
Aeroflex.com/1N5139ACO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.7","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"6.8 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"5 %","Quality Factor-Min":"350","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configurati...
1269 Bytes - 13:53:42, 21 September 2024
Apitech.com/1N5139A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"6.8 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1393 Bytes - 13:53:42, 21 September 2024
Crystalonics.com/1N5139A
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.7","Package Style":"LONG FORM","Diode Cap Tolerance":"4.41 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"6.8 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"350","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Con...
1255 Bytes - 13:53:42, 21 September 2024
Dla.mil/1N5139A+JAN
{"C1\/C2 Min. Capacitance Ratio":"2.7","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"350","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"Y","Mil Number":"JAN1N5139A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
858 Bytes - 13:53:42, 21 September 2024
Dla.mil/1N5139A+JANTX
{"C1\/C2 Min. Capacitance Ratio":"2.7","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"350","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"Y","Mil Number":"JANTX1N5139A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
870 Bytes - 13:53:42, 21 September 2024
Dla.mil/1N5139A+JANTXV
{"C1\/C2 Min. Capacitance Ratio":"2.7","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"350","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"Y","Mil Number":"JANTXV1N5139A","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
876 Bytes - 13:53:42, 21 September 2024
Microsemi.com/1N5139A
664 Bytes - 13:53:42, 21 September 2024
Various/1N5139ACHIP
{"C1\/C2 Min. Capacitance Ratio":"2.7","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"350","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
744 Bytes - 13:53:42, 21 September 2024
