Datasheet.Directory

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"25","g(fs) Max, (S) Trans. conduct,":"6.0","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"2.0","Package":"TO-39","I(DSS) Min. (A)":"1m","Military":"Y","Mil Number":"JANTX2N6800","t(r) Max. (s) Rise time":"35n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"35n","g(fs) Min. (S) Trans. conduct.":"2.0","I(D) Abs. Drain Current (A)":"3.0"}...

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"25","g(fs) Max, (S) Trans. conduct,":"6.0","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"2.0","Package":"TO-39","I(DSS) Min. (A)":"1m","Military":"Y","Mil Number":"JANTXV2N6800","t(r) Max. (s) Rise time":"35n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"35n","g(fs) Min. (S) Trans. conduct.":"2.0","I(D) Abs. Drain Current (A)":"3.0"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Operating Temperature-Max":"125 Cel","Mfr Package Description":"RADIAL LEADED","Operating Temperature-Min":"-55 Cel","Terminal Shape":"WIRE","Multilayer":"Yes","Mounting Feature":"THROUGH HOLE MOUNT","Negative Tolerance":"20 %","Capacitance":"0.0068 uF","Capacitor Type":"CERAMIC","Manufacturer Series":"TCN62","Rated DC Voltage (URdc)":"63 V","Package Shape":"RECTANGULAR PACKAGE","Positive Tolerance":"20 %","Temperature Characteristics Code":"2C1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...