Product Datasheet Search Results:

2SC5509-T2-A.pdf11 Pages, 1043 KB, Original
2SC5509-T2-A
Cel
RF Bipolar Transistors NPN High Frequency RF Bipolar Transistors NPN High Frequency
2SC5509-T2.pdf15 Pages, 82 KB, Original
2SC5509-T2
Nec Electronics
NPN SILICON RF TRANSISTOR
2SC5509-T2.pdf12 Pages, 210 KB, Original
2SC5509-T2
Renesas Electronics
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5509-T2-FB.pdf12 Pages, 210 KB, Original
2SC5509-T2-FB
Renesas Electronics
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

Product Details Search Results:

Cel.com/2SC5509-T2-A
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Online Catalog":"NPN RF Transistors","Noise Figure (dB Typ @ f)":"1.2dB @ 2GHz","Transistor Type":"NPN","Family":"RF Transistors (BJT)","Product Photos":"M04 PKG SOT-343F","Frequency - Transition":"15GHz","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"3.3V","Supplier Device Package":"SOT-343","Packaging":"Tape & Reel (TR)","Datasheets":"NE663M04","Power - Max":"190mW","Gain":"14dB"...
1633 Bytes - 14:44:29, 23 January 2025
Renesas.com/2SC5509-T2
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"NPN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1900 W","Collector Current-Max (IC)":"0.1000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"3.3 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base Capacitance-...
1443 Bytes - 14:44:29, 23 January 2025
Renesas.com/2SC5509-T2-FB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.7500 pF","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"THIN, SUPER MINIMOLD, M04, 4 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1900 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"3.3 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"15000 MHz","Highest Frequency Band":"L BAND","Number of Elements":"1","Transistor Element Material"...
1429 Bytes - 14:44:29, 23 January 2025

Documentation and Support

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