Product Datasheet Search Results:
5 Pages, 134 KB, Original- 2SD2012(F)
- Toshiba
- Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS
Product Details Search Results:
Toshiba.co.jp/2SD2012(F)
{"Collector Current (DC) ":"3(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"60(V)","Mounting":"Through Hole","Emitter-Base Voltage":"7(V)","Category ":"Bipolar Power","Power Dissipation":"2(W)","Rad Hardened":"No","Frequency":"3(MHz)","Package Type":"TO-220NIS","Collector-Base Voltage":"60(V)","DC Current Gain":"100@0.5A@5V/20@5A@5V","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":"1"}...
1490 Bytes - 08:22:22, 02 April 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SD2012.pdf | 0.12 | 1 | Request |
