Product Datasheet Search Results:

AUIRF1405.pdf12 Pages, 213 KB, Original
AUIRF1405
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 169A Automotive 3-Pin(3+Tab) TO-220AB Tube
AUIRF1405ZL.pdf12 Pages, 341 KB, Original
AUIRF1405ZL
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 150A Automotive 3-Pin(3+Tab) TO-262 Tube
AUIRF1405ZS.pdf12 Pages, 341 KB, Original
AUIRF1405ZS
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 150A Automotive 3-Pin(2+Tab) D2PAK Tube
AUIRF1405ZSTRL.pdf12 Pages, 341 KB, Original
AUIRF1405ZSTRL
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 150A Automotive 3-Pin(2+Tab) D2PAK T/R
AUIRF1405.pdf13 Pages, 228 KB, Original
AUIRF1405
International Rectifier
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
AUIRF1405ZL.pdf14 Pages, 316 KB, Original
AUIRF1405ZL
International Rectifier
MOSFET N-CH 55V 150A TO262 - AUIRF1405ZL
AUIRF1405ZL-308.pdf13 Pages, 349 KB, Original
AUIRF1405ZL-308
International Rectifier
MOSFET AUTOMOTIVE MOSFET 55V 75A
AUIRF1405ZS.pdf14 Pages, 316 KB, Original
AUIRF1405ZS
International Rectifier
MOSFET N-CH 55V 150A D2PAK - AUIRF1405ZS
AUIRF1405ZS-7P.pdf14 Pages, 270 KB, Original
AUIRF1405ZS-7P
International Rectifier
MOSFET Automotive G10.2 MOSFET 55V
AUIRF1405ZS-7TRL.pdf14 Pages, 270 KB, Original
AUIRF1405ZS-7TRL
International Rectifier
MOSFET Automotive G10.2 MOSFET 55V
AUIRF1405ZSTRL.pdf14 Pages, 316 KB, Original
AUIRF1405ZSTRL
International Rectifier
MOSFET N-CH 55V 150A D2PAK - AUIRF1405ZSTRL
AUIRF1405ZSTRR.pdf14 Pages, 316 KB, Original
AUIRF1405ZSTRR
International Rectifier
MOSFET N-CH 55V 150A D2PAK - AUIRF1405ZSTRR

Product Details Search Results:

Infineon.com/AUIRF1405
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"169(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"330(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1543 Bytes - 07:30:53, 01 November 2024
Infineon.com/AUIRF1405ZL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"150(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1565 Bytes - 07:30:53, 01 November 2024
Infineon.com/AUIRF1405ZS
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"150(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1555 Bytes - 07:30:53, 01 November 2024
Infineon.com/AUIRF1405ZSTRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"150(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1570 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-220AB PKG","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-220-3","Supplier Device Package":"TO-220AB","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF1405","Rds On (Max) @ Id, Vgs":"5.3 mOhm @ 101A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"330W","Standard Package"...
1680 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"150A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 75A, 10V","Dat...
1841 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZL-308
{"Factory Pack Quantity":"50","Vds - Drain-Source Breakdown Voltage":"55 V","Transistor Polarity":"N-Channel","Brand":"International Rectifier","Id - Continuous Drain Current":"110 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"230 W","Packaging":"Tube","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"4.9 mOhms","Package / Case":"D-PAK-3","Maximum Operating Temperature":"+ 175 C","RoHS":"Details","Manufacturer":"International Rectifier"}...
1491 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"150A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 75A, 10V","Datasheets":"AUIRF...
1807 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZS-7P
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK (7-Lead)","Datasheets":"AUIRF1405ZS-7P","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 88A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"230W","PCN Packaging":"Package Drawing Update 19/Aug/2015","Package / Case":"TO-263-7, D\u00b2Pak (6...
1575 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZS-7TRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Input Capacitance (Ciss) @ Vds":"5360pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK (7-Lead)","Datasheets":"AUIRF1405ZS-7P","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 88A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"230W","PCN Packaging":"Package Drawing ...
1652 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZSTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"150A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 75A, 10V","Datasheets":"AUIRF...
1846 Bytes - 07:30:53, 01 November 2024
Irf.com/AUIRF1405ZSTRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0049 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"600 A","Channel Type":"N-CHA...
1628 Bytes - 07:30:53, 01 November 2024

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IRF1405S.pdf0.311Request
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