Product Datasheet Search Results:

IRHF593130.pdf8 Pages, 205 KB, Original
IRHF593130
International Rectifier
6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF593130SCS.pdf8 Pages, 404 KB, Original
IRHF593130SCS
International Rectifier
Trans MOSFET P-CH 100V 6.7A 3-Pin TO-205AF

Product Details Search Results:

Irf.com/IRHF593130
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"26.8 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1475 Bytes - 09:20:04, 22 January 2025
Irf.com/IRHF593130SCS
{"Category":"MOSFET","Maximum Drain Source Voltage":"100(Min) V","Dose Level":"300 krad","Typical Turn-Off Delay Time":"45(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-205AF","Typical Turn-On Delay Time":"25(Max) ns","Mounting":"Through Hole","Typical Rise Time":"50(Max) ns","Channel Type":"P","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.24@12V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":...
1458 Bytes - 09:20:04, 22 January 2025

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METSEION93130.pdf16.021Request