Did you mean: IRHF593110
Product Datasheet Search Results:
- IRHF593110
- International Rectifier
- 2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF593110PBF
- International Rectifier
- 2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF593130
- International Rectifier
- 6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF593130SCS
- International Rectifier
- Trans MOSFET P-CH 100V 6.7A 3-Pin TO-205AF
- IRHF593230
- International Rectifier
- -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
- IRHF597110
- International Rectifier
- 2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF597110PBF
- International Rectifier
- 2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF597130
- International Rectifier
- 6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF597130SCS
- International Rectifier
- Trans MOSFET P-CH 100V 6.7A 3-Pin TO-39
- IRHF597230
- International Rectifier
- 4.5 A, 200 V, 0.54 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRHF597230PBF
- International Rectifier
- 4.5 A, 200 V, 0.54 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/IRHF593110
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1479 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF593110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-...
1543 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF593130
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"26.8 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1475 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF593130SCS
{"Category":"MOSFET","Maximum Drain Source Voltage":"100(Min) V","Dose Level":"300 krad","Typical Turn-Off Delay Time":"45(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-205AF","Typical Turn-On Delay Time":"25(Max) ns","Mounting":"Through Hole","Typical Rise Time":"50(Max) ns","Channel Type":"P","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.24@12V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":...
1458 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597110
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1476 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-...
1546 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597130
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"26.8 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1476 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597130SCS
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"45(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-39","Typical Turn-On Delay Time":"25(Max) ns","Mounting":"Through Hole","Typical Rise Time":"50(Max) ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"240@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"12...
1406 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597230
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"157 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1512 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597230PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"157 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"P-CHANNEL...
1580 Bytes - 09:13:55, 22 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
194110.pdf | 0.14 | 1 | Request | |
YOKOGAWA_33941103.pdf | 0.49 | 1 | Request | |
3GZF394110_26.pdf | 0.07 | 1 | Request | |
3GZF394110_21.pdf | 0.04 | 1 | Request | |
3GBA094110_ASDIN.pdf | 0.06 | 1 | Request | |
7B089411061AA.pdf | 0.06 | 1 | Request | |
3GGA094110_ASDIN.pdf | 0.21 | 1 | Request | |
3GBA094110_HSCIN.pdf | 0.05 | 1 | Request | |
3GQA094110_BSL.pdf | 0.35 | 1 | Request | |
7B089411061B.pdf | 0.06 | 1 | Request | |
3GQP094110_BSL.pdf | 0.35 | 1 | Request | |
3GZF394110_22.pdf | 0.04 | 1 | Request |