Product Datasheet Search Results:

IRHF593110.pdf8 Pages, 132 KB, Original
IRHF593110
International Rectifier
2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF593110PBF.pdf8 Pages, 132 KB, Original
IRHF593110PBF
International Rectifier
2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF593130.pdf8 Pages, 205 KB, Original
IRHF593130
International Rectifier
6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF593130SCS.pdf8 Pages, 404 KB, Original
IRHF593130SCS
International Rectifier
Trans MOSFET P-CH 100V 6.7A 3-Pin TO-205AF
IRHF593230.pdf8 Pages, 123 KB, Original
IRHF593230
International Rectifier
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
IRHF597110.pdf8 Pages, 132 KB, Original
IRHF597110
International Rectifier
2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF597110PBF.pdf8 Pages, 132 KB, Original
IRHF597110PBF
International Rectifier
2.6 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF597130.pdf8 Pages, 205 KB, Original
IRHF597130
International Rectifier
6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF597130SCS.pdf8 Pages, 404 KB, Original
IRHF597130SCS
International Rectifier
Trans MOSFET P-CH 100V 6.7A 3-Pin TO-39
IRHF597230.pdf8 Pages, 123 KB, Original
IRHF597230
International Rectifier
4.5 A, 200 V, 0.54 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF597230PBF.pdf8 Pages, 123 KB, Original
IRHF597230PBF
International Rectifier
4.5 A, 200 V, 0.54 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

Product Details Search Results:

Irf.com/IRHF593110
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1479 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF593110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-...
1543 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF593130
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"26.8 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1475 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF593130SCS
{"Category":"MOSFET","Maximum Drain Source Voltage":"100(Min) V","Dose Level":"300 krad","Typical Turn-Off Delay Time":"45(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-205AF","Typical Turn-On Delay Time":"25(Max) ns","Mounting":"Through Hole","Typical Rise Time":"50(Max) ns","Channel Type":"P","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.24@12V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":...
1458 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597110
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1476 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-...
1546 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597130
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"26.8 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1476 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597130SCS
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"45(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-39","Typical Turn-On Delay Time":"25(Max) ns","Mounting":"Through Hole","Typical Rise Time":"50(Max) ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"240@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"12...
1406 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597230
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"157 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1512 Bytes - 09:13:55, 22 January 2025
Irf.com/IRHF597230PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"157 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"P-CHANNEL...
1580 Bytes - 09:13:55, 22 January 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
194110.pdf0.141Request
YOKOGAWA_33941103.pdf0.491Request
3GZF394110_26.pdf0.071Request
3GZF394110_21.pdf0.041Request
3GBA094110_ASDIN.pdf0.061Request
7B089411061AA.pdf0.061Request
3GGA094110_ASDIN.pdf0.211Request
3GBA094110_HSCIN.pdf0.051Request
3GQA094110_BSL.pdf0.351Request
7B089411061B.pdf0.061Request
3GQP094110_BSL.pdf0.351Request
3GZF394110_22.pdf0.041Request