Product Datasheet Search Results:
2 Pages, 50 KB, Original- IXBT42N170
- Ixys Corporation
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
2 Pages, 116 KB, Original- IXBT42N170A
- Ixys Corporation
- Discrete IGBTs
6 Pages, 178 KB, Original- IXBT42N170
- Littelfuse
- Trans IGBT Chip N-CH 1700V 80A 360000mW 3-Pin(2+Tab) TO-268
5 Pages, 175 KB, Original- IXBT42N170
- Zilog
- 80 A, 1700 V, N-CHANNEL IGBT, TO-268AA
6 Pages, 236 KB, Original- IXBT42N170A
- Zilog
- 42 A, 1700 V, N-CHANNEL IGBT, TO-268
Product Details Search Results:
Ixys.com/IXBT42N170
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"80A","Switching Energy":"-","Vce(on) (Max) @ Vge, Ic":"2.8V @ 15V, 42A","Td (on/off) @ 25\u00b0C":"-","Input Type":"Standard","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Gate Charge":"188nC","Product Photos":"IXBT42N170","Voltage - Collector Emitter Breakdown (Max)":"1700V","Reverse Recovery Time (trr)":"1.32\u00b5s","Datasheets":"IXB(H,T)42N170","Standard Package":"30","Test Condition":"-","IGBT Type":"-"...
2265 Bytes - 06:19:48, 04 August 2026
Ixys.com/IXBT42N170A
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"42A","Switching Energy":"3.43mJ (on), 430\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"6V @ 15V, 21A","Td (on/off) @ 25\u00b0C":"19ns/200ns","Input Type":"Standard","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Gate Charge":"188nC","Voltage - Collector Emitter Breakdown (Max)":"1700V","Reverse Recovery Time (trr)":"330ns","Datasheets":"IXBx42N170A","Standard Package":"30","Test Condition":"850V, 21A, 1 Ohm, 15V"...
1524 Bytes - 06:19:48, 04 August 2026
Littelfuse.com/IXBT42N170
{"Collector Current (DC) ":"80(A)","Operating Temperature (Min)":"-55C","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-268","Configuration":"Single","Pin Count":"2 +Tab"}...
1437 Bytes - 06:19:48, 04 August 2026
Zilog.com/IXBT42N170
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"1070 ns","Collector Current-Max (IC)":"80 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"224 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1700 V","Channel Type":"N-CHANNEL","Transistor Applica...
1408 Bytes - 06:19:48, 04 August 2026
Zilog.com/IXBT42N170A
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"420 ns","Collector Current-Max (IC)":"42 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"63 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1700 V","Channel Type":"N-CHANNEL","Transistor Applicati...
1403 Bytes - 06:19:48, 04 August 2026
Documentation and Support
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| IXBT42N170A.pdf | 0.05 | 1 | Request |
