Product Datasheet Search Results:
6 Pages, 210 KB, Original- TK40A10K3
- Toshiba America Electronic Components, Inc.
- 40 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 236 KB, Original- TK40A10K3,S5Q(J
- Toshiba
- TK40A10K3,S5Q(J
10 Pages, 947 KB, Original- TK40A10K3,S5Q(J)
- Toshiba
- TK40A10K3,S5Q(J)
Product Details Search Results:
Toshiba.co.jp/TK40A10K3
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"137 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V...
1518 Bytes - 12:40:00, 24 March 2025
Toshiba.co.jp/TK40A10K3,S5Q(J
842 Bytes - 12:40:00, 24 March 2025
Toshiba.co.jp/TK40A10K3,S5Q(J)
849 Bytes - 12:40:00, 24 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TK40A10K3.pdf | 0.17 | 1 | Request |
