Product Datasheet Search Results:
4 Pages, 708 KB, Original- 2SD2012-BP
- Micro Commercial Components Corp.
- 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 Pages, 87 KB, Original- 2SD2012
- Stmicroelectronics
- TRANSISTOR NPN 60V 3A TO-220F - 2SD2012
5 Pages, 134 KB, Original- 2SD2012(F)
- Toshiba
- Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS
20 Pages, 444 KB, Original- 2SD2012(F,J)
- Toshiba
- 2SD2012(F,J)
5 Pages, 134 KB, Original- 2SD2012,F(J
- Toshiba
- Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS
5 Pages, 118 KB, Original- 2SD2012(F,M)
- Toshiba
- TRANSISTOR NPN 60V 3A TO220NIS - 2SD2012(F,M)
5 Pages, 87 KB, Original- 2SD2012(M)
- Toshiba
- Trans GP BJT NPN 60V 3A 3-Pin (3+Tab) TO-220SIS
Product Details Search Results:
Mccsemi.com/2SD2012-BP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Collector Current-Max (IC)":"3 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"60 V","Terminal Position":"SINGLE","Case Connection":"ISOLATED","Mfr Package ...
1447 Bytes - 03:34:34, 30 March 2025
N_a/2SD2012
{"Category":"NPN Transistor, Transistor","Amps":"3A","MHz":"3 MHz","Volts":"60V"}...
514 Bytes - 03:34:34, 30 March 2025
St.com/2SD2012
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"3A","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 500mA, 5V","Transistor Type":"NPN","Product Photos":"TO-220AB","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 200mA, 2A","Current - Collector Cutoff (Max)":"100\u00b5A (ICBO)","Series":"-","Standard Package":"50","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-220F","Packaging":"Tube","Datasheets":"2SD2012","Power - ...
1590 Bytes - 03:34:34, 30 March 2025
Toshiba.co.jp/2SD2012
714 Bytes - 03:34:34, 30 March 2025
Toshiba.co.jp/2SD2012(F)
{"Collector Current (DC) ":"3(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"60(V)","Mounting":"Through Hole","Emitter-Base Voltage":"7(V)","Category ":"Bipolar Power","Power Dissipation":"2(W)","Rad Hardened":"No","Frequency":"3(MHz)","Package Type":"TO-220NIS","Collector-Base Voltage":"60(V)","DC Current Gain":"100@0.5A@5V/20@5A@5V","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":"1"}...
1490 Bytes - 03:34:34, 30 March 2025
Toshiba.co.jp/2SD2012(F,J)
824 Bytes - 03:34:34, 30 March 2025
Toshiba.co.jp/2SD2012,F(J
{"Collector Current (DC) ":"3(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"60(V)","Mounting":"Through Hole","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Pin Count":"3 +Tab","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Frequency":"3(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"60(V)","DC Current Gain":"100@0.5A@5V/20@5A@5V","Category ":"Bipolar Power","Package Type":"TO-220NIS","Configuration":"Single","Operating Temperature Classification":"Mili...
1580 Bytes - 03:34:34, 30 March 2025
Toshiba.co.jp/2SD2012(M)
914 Bytes - 03:34:34, 30 March 2025
Various/2SD2012-G
Power, General Purpose, 2SD2012-G, Silicon, NPN, 25W, 60V, 60V, 7V, 3A, 150°C, 9MHz, 150MIN, SAM, TO220...
572 Bytes - 03:34:34, 30 March 2025
Various/2SD2012-Y
Power, General Purpose, 2SD2012-Y, Silicon, NPN, 25W, 60V, 60V, 7V, 3A, 150°C, 9MHz, 100MIN, SAM, TO220...
572 Bytes - 03:34:34, 30 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SD2012.pdf | 0.12 | 1 | Request |
