Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 50\u00b5A","Input Capacitance (Ciss) @ Vds":"1550pF @ 25V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TO252-3","Datasheets":"SPD30N03S2L-10","Rds On (Max) @ Id, Vgs":"10 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"100W","Package / Case":"TO-252-3, DPak (2 Lead...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 50\u00b5A","Input Capacitance (Ciss) @ Vds":"1550pF @ 25V","Series":"OptiMOS\u2122","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"PG-TO252-3","Datasheets":"SPD30N03S2L-10 G","Rds On (Max) @ Id, Vgs":"10 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"100W","...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"14.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET ...